IPD80R600P7ATMA1 vs IPD80R750P7ATMA1 Perbandingan
Perbandingan bersamaan detil IPD80R600P7ATMA1 dari Infineon dan IPD80R750P7ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPD80R600P7ATMA1 | IPD80R750P7ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Drain-Source Voltage (VDS) | 800 V | 800 V |
| Continuous Drain Current (ID, Tc) | 8 A | — |
| Pulsed Drain Current (IDM) | 22 A | — |
| On-Resistance (RDS(on), max) | 600 mΩ at VGS=10V | — |
| Maximum Power Dissipation (Ptot) | 60 W (Tc) | — |
| Gate Threshold Voltage (VGS(th)) | 3 V (typical) | 3.5 V (typical) |
| Maximum Gate-Source Voltage (VGS) | ±30 V | — |
| Avalanche Energy, Single Pulse (EAS) | 20 mJ | — |
| Avalanche Energy, Repetitive (EAR) | 0.17 mJ | — |
| Rentang Suhu Kerja | -55 C to +150 C | — |
| Paket | PG-TO252-3 (DPAK) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | CoolMOS P7 super-junction | CoolMOS (Super-Junction) |
| Polarity | N-Channel | — |
| Level MSL | 1 (per JEDEC J-STD-020) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | CoolMOS P7 |
| Part Number | — | IPD80R750P7ATMA1 |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TC=25C | — | 7 A |
| On-Resistance (RDS(on)) max at VGS=10V | — | 750 mOhm |
| Gate Charge (Qg) typ | — | [DATA_NEEDED: Qg value] |
| Power Dissipation (PD) at TC=25C | — | 51 W |
| Paket / Case | — | PG-TO252-3 (DPAK) |
| Suhu Kerja | — | -55C to +150C (TJ) |
| Gate Protection | — | Integrated Zener (ESD protected) |
| Packaging | — | Tape & Reel (ATMA1) |
| Status RoHS | — | Compliant |