IPD80R750P7ATMA1 vs IPD50N06S409ATMA2 Perbandingan
Perbandingan bersamaan detil IPD80R750P7ATMA1 dari Infineon dan IPD50N06S409ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPD80R750P7ATMA1 | IPD50N06S409ATMA2 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | CoolMOS P7 | — |
| Part Number | IPD80R750P7ATMA1 | — |
| FET Type | N-Channel | — |
| Technology | CoolMOS (Super-Junction) | N-Channel MOSFET (OptiMOS) |
| Drain-Source Voltage (VDS) | 800 V | 60 V |
| Continuous Drain Current (ID) at TC=25C | 7 A | — |
| On-Resistance (RDS(on)) max at VGS=10V | 750 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | 3.5 V (typical) | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge (Qg) typ | [DATA_NEEDED: Qg value] | — |
| Power Dissipation (PD) at TC=25C | 51 W | — |
| Paket / Case | PG-TO252-3 (DPAK) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | -55C to +150C (TJ) | — |
| Gate Protection | Integrated Zener (ESD protected) | — |
| Packaging | Tape & Reel (ATMA1) | — |
| Status RoHS | Compliant | Compliant |
| Continuous Drain Current (ID) at Tc | — | 50 A |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | — | 9 mΩ |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (Pd) at Tc | — | 71 W |
| Suhu Hubung Kerja | — | -55 °C to +175 °C |
| Paket | — | PG-TO252-3-11 (DPAK) |
| Jumlah Pin | — | 3 (2 + Tab) |
| Automotive Qualification | — | AEC-Q101 |
| Lead-Free / Halogen-Free | — | [DATA_NEEDED] |