IPG16N10S461AATMA1 vs IPG20N06S2L65AATMA1 Perbandingan
Perbandingan bersamaan detil IPG16N10S461AATMA1 dari Infineon dan IPG20N06S2L65AATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPG16N10S461AATMA1 | IPG20N06S2L65AATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Type | Dual N-Channel MOSFET Array | — |
| Technology | OptiMOS™ trench | OptiMOS Trench MOSFET |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) | 16 A | 20 A (per channel) |
| On-Resistance R_DS(on) typ. | 61 mΩ | — |
| Total Power Dissipation (Ptot) | 29 W (T_C = 25°C) | — |
| Configuration | 2 N-Channel (Dual, separate) | — |
| Gate Threshold Voltage V_GS(th) typ. | [DATA_NEEDED: gate threshold voltage] | — |
| Maximum Junction Temperature | 175 °C | — |
| Rentang Suhu Kerja | -55 °C to +175 °C | — |
| Paket | PG-TDSON-8-10 (Wettable Flank) | PG-TDSON-8-10 (TDSON-8 EP, wettable flank) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Terminal Count | 8 | — |
| Level MSL | [DATA_NEEDED: MSL rating] | MSL1 (peak reflow 260 C) |
| Status RoHS | Compliant | Compliant (Green Product) |
| Built-in Body Diode | Yes | — |
| Channel Mode | Enhancement | — |
| Series | — | OptiMOS |
| FET Type | — | Dual N-Channel (Half Bridge / Independent) |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Power Dissipation (PD) | — | 43 W |
| Gate Threshold (VGS(th)) | — | Logic-Level |
| Suhu Kerja | — | -55 C to +175 C |
| AEC-Q101 Qualification | — | Yes |
| Avalanche Tested | — | 100% (per datasheet) |
| AOI Compatible | — | Yes (wettable flank) |