IPG16N10S461AATMA1 vs IPG20N06S2L65AATMA1 比較
詳細並排比較 IPG16N10S461AATMA1 由 Infineon 與 IPG20N06S2L65AATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPG16N10S461AATMA1 | IPG20N06S2L65AATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Type | Dual N-Channel MOSFET Array | — |
| Technology | OptiMOS™ trench | OptiMOS Trench MOSFET |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) | 16 A | 20 A (per channel) |
| On-Resistance R_DS(on) typ. | 61 mΩ | — |
| Total Power Dissipation (Ptot) | 29 W (T_C = 25°C) | — |
| Configuration | 2 N-Channel (Dual, separate) | — |
| Gate Threshold Voltage V_GS(th) typ. | [DATA_NEEDED: gate threshold voltage] | — |
| Maximum Junction Temperature | 175 °C | — |
| 工作溫度範圍 | -55 °C to +175 °C | — |
| 封裝 | PG-TDSON-8-10 (Wettable Flank) | PG-TDSON-8-10 (TDSON-8 EP, wettable flank) |
| 安裝類型 | Surface Mount | Surface Mount |
| Terminal Count | 8 | — |
| MSL 等級 | [DATA_NEEDED: MSL rating] | MSL1 (peak reflow 260 C) |
| RoHS 狀態 | Compliant | Compliant (Green Product) |
| Built-in Body Diode | Yes | — |
| Channel Mode | Enhancement | — |
| Series | — | OptiMOS |
| FET Type | — | Dual N-Channel (Half Bridge / Independent) |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Power Dissipation (PD) | — | 43 W |
| Gate Threshold (VGS(th)) | — | Logic-Level |
| 工作溫度 | — | -55 C to +175 C |
| AEC-Q101 Qualification | — | Yes |
| Avalanche Tested | — | 100% (per datasheet) |
| AOI Compatible | — | Yes (wettable flank) |