IPL60R115CFD7AUMA1 vs IPW60R037P7XKSA1 Perbandingan
Perbandingan bersamaan detil IPL60R115CFD7AUMA1 dari Infineon dan IPW60R037P7XKSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPL60R115CFD7AUMA1 | IPW60R037P7XKSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPL60R115CFD7AUMA1 | — |
| Series | CoolMOS CFD7 | CoolMOS™ P7 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID, Tc) | 22 A | — |
| On-Resistance (RDS(on)) | 115 mOhm (typ, VGS=10V) | — |
| Paket / Case | PG-VSON-4 (5x6 mm) with exposed pad | — |
| Tipe Mounting | Surface Mount | Through Hole |
| Technology | Superjunction MOSFET (CoolMOS CFD7) | CoolMOS Superjunction (SJ) |
| Integrated Body Diode | Yes - fast body diode (CFD) | — |
| Application | Resonant high-power topologies (LLC, PFC) | — |
| Rentang Suhu Kerja | [DATA_NEEDED: operating temperature range] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Status RoHS | Compliant (per distributor listings) | Compliant |
| Jumlah Pin | 4 | — |
| Quantity per Reel | [DATA_NEEDED: reel qty] | — |
| Tipe Transistor | — | N-Channel MOSFET (Superjunction) |
| Drain-Source Voltage (V_DSS) | — | 600 V |
| Continuous Drain Current (I_D, Tc=25 °C) | — | 76 A |
| On-Resistance (R_DS(on), max, V_GS=10 V) | — | 37 mΩ |
| Power Dissipation (P_D, Tc=25 °C) | — | 255 W |
| Gate Threshold Voltage (V_GS(th), typ) | — | 3.5 V |
| Paket | — | PG-TO247-3 (TO-247-3, through-hole) |
| Suhu Hubung Kerja | — | -55 °C to +150 °C |
| Orderable Part Number Suffix | — | XKSA1 (tube packaging, industrial) |
| Avalanche Rated | — | Yes |