IPL60R115CFD7AUMA1 vs IPW60R037P7XKSA1 比較
詳細並排比較 IPL60R115CFD7AUMA1 由 Infineon 與 IPW60R037P7XKSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPL60R115CFD7AUMA1 | IPW60R037P7XKSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPL60R115CFD7AUMA1 | — |
| Series | CoolMOS CFD7 | CoolMOS™ P7 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID, Tc) | 22 A | — |
| On-Resistance (RDS(on)) | 115 mOhm (typ, VGS=10V) | — |
| 封裝 / 外殼 | PG-VSON-4 (5x6 mm) with exposed pad | — |
| 安裝類型 | Surface Mount | Through Hole |
| Technology | Superjunction MOSFET (CoolMOS CFD7) | CoolMOS Superjunction (SJ) |
| Integrated Body Diode | Yes - fast body diode (CFD) | — |
| Application | Resonant high-power topologies (LLC, PFC) | — |
| 工作溫度範圍 | [DATA_NEEDED: operating temperature range] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| RoHS 狀態 | Compliant (per distributor listings) | Compliant |
| 腳位數 | 4 | — |
| Quantity per Reel | [DATA_NEEDED: reel qty] | — |
| 電晶體類型 | — | N-Channel MOSFET (Superjunction) |
| Drain-Source Voltage (V_DSS) | — | 600 V |
| Continuous Drain Current (I_D, Tc=25 °C) | — | 76 A |
| On-Resistance (R_DS(on), max, V_GS=10 V) | — | 37 mΩ |
| Power Dissipation (P_D, Tc=25 °C) | — | 255 W |
| Gate Threshold Voltage (V_GS(th), typ) | — | 3.5 V |
| 封裝 | — | PG-TO247-3 (TO-247-3, through-hole) |
| 工作接面溫度 | — | -55 °C to +150 °C |
| Orderable Part Number Suffix | — | XKSA1 (tube packaging, industrial) |
| Avalanche Rated | — | Yes |