IPL60R180P6AUMA1 vs IPL60R105P7AUMA1 Perbandingan

Perbandingan bersamaan detil IPL60R180P6AUMA1 dari Infineon dan IPL60R105P7AUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPL60R180P6AUMA1 IPL60R105P7AUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology CoolMOS P6 (Superjunction N-channel MOSFET) Superjunction (SJ) N-Channel Power MOSFET
Drain-Source Voltage (VDS) 600 V 600 V
Gate-Source Voltage (VGS) -20 V to +20 V (max) —
Continuous Drain Current (ID) at Tc=25°C 22.4 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] [DATA_NEEDED: pulsed drain current]
Static Drain-Source On-Resistance (RDS(on)) max @ VGS=10V 180 mΩ —
Power Dissipation (Ptot) at Tc=25°C 176 W —
Rentang Suhu Hubung Kerja -55 °C to +150 °C —
Storage Temperature Range -55 °C to +150 °C —
Thermal Resistance Junction-to-Case (RθJC) [DATA_NEEDED: RθJC value] —
Gate Threshold Voltage (VGS(th)) 2.5 V to 3.5 V (typical 3.0 V) —
Paket PG-VSON-4 (Thin-PAK) surface mount PG-VSON-4 (4-pin SMD with exposed pad)
Tipe Mounting Surface Mount Surface Mount
MSL (Moisture Sensitivity Level) MSL 1 (per JEDEC J-STD-020) —
Status RoHS Compliant Compliant
Lead-Free Yes Yes
Manufacturer — Infineon Technologies
Series — CoolMOS P7
On-Resistance (RDS(on)) max — 105 mΩ
Continuous Drain Current (ID) at Tc — 33 A
Power Dissipation (Ptot) at Tc — 137 W
Gate Threshold Voltage (VGS(th)) typ — 3.5 V
Gate Charge (Qg) typ — 45 nC
Rentang Suhu Kerja — -55C to +150C
Channel Type — N-Channel
Level MSL — [DATA_NEEDED: MSL rating]
Bebas Halogen — Yes

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