IPL60R180P6AUMA1 vs IPL60R105P7AUMA1 Comparison

Detailed side-by-side comparison of IPL60R180P6AUMA1 by Infineon and IPL60R105P7AUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPL60R180P6AUMA1 IPL60R105P7AUMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Technology CoolMOS P6 (Superjunction N-channel MOSFET) Superjunction (SJ) N-Channel Power MOSFET
Drain-Source Voltage (VDS) 600 V 600 V
Gate-Source Voltage (VGS) -20 V to +20 V (max) —
Continuous Drain Current (ID) at Tc=25°C 22.4 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] [DATA_NEEDED: pulsed drain current]
Static Drain-Source On-Resistance (RDS(on)) max @ VGS=10V 180 mΩ —
Power Dissipation (Ptot) at Tc=25°C 176 W —
Operating Junction Temperature Range -55 °C to +150 °C —
Storage Temperature Range -55 °C to +150 °C —
Thermal Resistance Junction-to-Case (RθJC) [DATA_NEEDED: RθJC value] —
Gate Threshold Voltage (VGS(th)) 2.5 V to 3.5 V (typical 3.0 V) —
Package PG-VSON-4 (Thin-PAK) surface mount PG-VSON-4 (4-pin SMD with exposed pad)
Mounting Type Surface Mount Surface Mount
MSL (Moisture Sensitivity Level) MSL 1 (per JEDEC J-STD-020) —
RoHS Status Compliant Compliant
Lead-Free Yes Yes
Manufacturer — Infineon Technologies
Series — CoolMOS P7
On-Resistance (RDS(on)) max — 105 mΩ
Continuous Drain Current (ID) at Tc — 33 A
Power Dissipation (Ptot) at Tc — 137 W
Gate Threshold Voltage (VGS(th)) typ — 3.5 V
Gate Charge (Qg) typ — 45 nC
Operating Temperature Range — -55C to +150C
Channel Type — N-Channel
MSL Level — [DATA_NEEDED: MSL rating]
Halogen Free — Yes

Datasheets & Resources

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