IPP075N15N3GXKSA1 vs IPP069N20NM6AKSA1 Perbandingan

Perbandingan bersamaan detil IPP075N15N3GXKSA1 dari Infineon dan IPP069N20NM6AKSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPP075N15N3GXKSA1 IPP069N20NM6AKSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 3 —
Technology N-Channel MOSFET (OptiMOS 3) OptiMOS 6 trench MOSFET
Drain-Source Voltage (VDS) 150 V 200 V
Continuous Drain Current (ID, Tc=25C) 100 A —
Power Dissipation (PD, Tc=25C) 300 W —
On-State Resistance (RDS(on) max, VGS=10V) 7.5 mOhm —
Gate-Source Voltage (VGS) [DATA_NEEDED: gate-source voltage absolute max] —
Paket PG-TO220-3 (TO-220 through-hole) PG-TO220-3-1 (TO-220-3 through-hole, 3+tab)
Tipe Mounting Through Hole Through Hole
Rentang Suhu Kerja [DATA_NEEDED: junction operating temperature range] -55C to +175C
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Lead-Free / RoHS RoHS Compliant —
Ordering Code Suffix GXKSA1 (Tube pack, RoHS compliant) —
FET Type — N-Channel
Continuous Drain Current (ID) at TC=25C — 136 A
Continuous Drain Current (ID) at TA=25C — 15.3 A
Power Dissipation (PD) at TC=25C — 300 W
Power Dissipation (PD) at TA=25C — 3.8 W
On-Resistance RDS(on) max at VGS=10V — 6.9 mΩ
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) value]
Gate Charge (Qg) — [DATA_NEEDED: Qg value]
Total Gate Charge at VGS=10V (Qg) — [DATA_NEEDED: Qg value]
Status RoHS — Compliant
Lead-Free — Yes
Level MSL — N/A (through-hole package)
Tab Connection — Electrically connected to Drain

Spek dan Sumber

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