IPT008N06NM5LFATMA1 vs BSC028N06NSTATMA1 Perbandingan

Perbandingan bersamaan detil IPT008N06NM5LFATMA1 dari Infineon dan BSC028N06NSTATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPT008N06NM5LFATMA1 BSC028N06NSTATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 5 / Linear FET —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID, Tc) 454 A —
Arus Kedip Pengecor [DATA_NEEDED: pulsed ID] —
On-Resistance RDS(on) at VGS=10 V 0.8 mΩ —
Gate-Source Threshold Voltage VGS(th) 3.6 V (typ, 250 µA test) —
Power Dissipation (Tc) 278 W —
Rentang Suhu Kerja -55 °C to +175 °C (TJ) —
Paket PG-HSOF-8 (single, flat-lead) PG-TDSON-8-7 (SuperSO8, 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Gate Drive (recommended) 10 V (logic-level compatible above 4.5 V VGS) —
Technology Trench MOSFET (OptiMOS 5) MOSFET N-Channel (OptiMOS 5)
Level MSL 1 (per JEDEC J-STD-020) 1
Status RoHS Compliant Compliant
REACH Status Compliant —
AEC-Q100 not_qualified (industrial-grade by default) —
Series — OptiMOS 5
Part Number Base — BSC028N06NS
Continuous Drain Current (ID) at TA=25C — 24 A
Continuous Drain Current (ID) at TC=25C — 100 A
On-Resistance RDS(on) max at VGS=10V — 2.8 mOhm
Gate Threshold Voltage VGS(th) typ — 2.5 V to 3.5 V
Total Gate Charge Qg — 37 nC @ VGS=10V
Input Capacitance Ciss — 3000 nC [DATA_NEEDED: confirm exact pF from datasheet]
Output Capacitance Coss — 825 pF
Reverse Transfer Capacitance Crss — 56 pF
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 100 W
Suhu Hubung Kerja — -55C to +175C
Bebas Halogen — Yes
AEC-Q101 Automotive Qualified — [DATA_NEEDED: confirm from datasheet - this is the NS base, automotive grade may differ]

Spek dan Sumber

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