IPT008N06NM5LFATMA1 vs BSC028N06NSTATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPT008N06NM5LFATMA1 sa pamamagitan ng Infineon at BSC028N06NSTATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPT008N06NM5LFATMA1 - 60V 454A 0.8mΩ N-Ch MOSFET HSOF-8 | Infineon
IPT008N06NM5LFATMA1 ✓ NakahandaInfineon
BSC028N06NSTATMA1 - 60V 2.8mΩ N-Ch OptiMOS 5 MOSFET | Infineon
BSC028N06NSTATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPT008N06NM5LFATMA1 | BSC028N06NSTATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 5 / Linear FET | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID, Tc) | 454 A | — |
| Pulsed Drain Kuru-kuryente | [DATA_NEEDED: pulsed ID] | — |
| On-Resistance RDS(on) at VGS=10 V | 0.8 mΩ | — |
| Gate-Source Threshold Voltage VGS(th) | 3.6 V (typ, 250 µA test) | — |
| Power Dissipation (Tc) | 278 W | — |
| Hanay ng Temperature na Operasyon | -55 °C to +175 °C (TJ) | — |
| Packhaging | PG-HSOF-8 (single, flat-lead) | PG-TDSON-8-7 (SuperSO8, 5x6 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Gate Drive (recommended) | 10 V (logic-level compatible above 4.5 V VGS) | — |
| Technology | Trench MOSFET (OptiMOS 5) | MOSFET N-Channel (OptiMOS 5) |
| Level ng MSL | 1 (per JEDEC J-STD-020) | 1 |
| Tindminan RoHS | Compliant | Compliant |
| REACH Status | Compliant | — |
| AEC-Q100 | not_qualified (industrial-grade by default) | — |
| Series | — | OptiMOS 5 |
| Part Number Base | — | BSC028N06NS |
| Continuous Drain Current (ID) at TA=25C | — | 24 A |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| On-Resistance RDS(on) max at VGS=10V | — | 2.8 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | 2.5 V to 3.5 V |
| Total Gate Charge Qg | — | 37 nC @ VGS=10V |
| Input Capacitance Ciss | — | 3000 nC [DATA_NEEDED: confirm exact pF from datasheet] |
| Output Capacitance Coss | — | 825 pF |
| Reverse Transfer Capacitance Crss | — | 56 pF |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 100 W |
| Temperature ng Junction na Operasyon | — | -55C to +175C |
| Wala sa Halogen | — | Yes |
| AEC-Q101 Automotive Qualified | — | [DATA_NEEDED: confirm from datasheet - this is the NS base, automotive grade may differ] |