IPT012N08NF2SATMA1 vs BSC019N08NS5ATMA1 Perbandingan

Perbandingan bersamaan detil IPT012N08NF2SATMA1 dari Infineon dan BSC019N08NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPT012N08NF2SATMA1 IPT012N08NF2SATMA1 - 80V, 1.2mΩ N-Channel MOSFET | Infineon

IPT012N08NF2SATMA1 - 80V, 1.2mΩ N-Channel MOSFET | Infineon

IPT012N08NF2SATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPT012N08NF2SATMA1 BSC019N08NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPT012N08NF2SATMA1 —
Product Family StrongIRFET™ —
Channel Type N-Channel —
Drain-Source Voltage (VDS) Max 80 V —
Continuous Drain Current (ID) at Ta 39 A —
Pulsed Drain Current (IDM) at Tc 351 A —
On-Resistance RDS(on) Typ @ VGS=10V 1.2 mΩ —
Gate Threshold Voltage (VGS(th)) Max 3.8 V —
Power Dissipation (PD) at Ta 3.8 W —
Power Dissipation (PD) at Tc 300 W —
Suhu Hubung Kerja -55 °C to +175 °C —
Paket PG-HSOF-8-10 (HSOF) PG-TSON-8-3 (SuperSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Pin Count (incl. tab) 9 pins (8+tab) —
Technology Trench MOSFET (OptiMOS-derived) OptiMOS 5 (N-channel trench)
Status RoHS Compliant Compliant
Packing Tape & Reel (T/R) —
Polarity — N-Channel
Drain-Source Voltage (VDS) max — 80 V
Gate-Source Voltage (VGS) max — ±20 V
Continuous Drain Current (ID) at TA=25C — 28 A
Continuous Drain Current (ID) at TC=25C — 237 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) max at VGS=10V — 1.9 mOhm
Gate Threshold Voltage VGS(th) typ — 3.0 V
Total Gate Charge Qg — [DATA_NEEDED: total gate charge Qg]
Power Dissipation (TA=25C) — 3 W
Power Dissipation (TC=25C) — 214 W
Rentang Suhu Kerja — -55 C to +150 C
Level MSL — 1
Avalanche Rated — Yes

Spek dan Sumber

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