IPT015N10N5ATMA1 vs BSC0504NSIATMA1 Perbandingan

Perbandingan bersamaan detil IPT015N10N5ATMA1 dari Infineon dan BSC0504NSIATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPT015N10N5ATMA1 BSC0504NSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number IPT015N10N5ATMA1 —
Technology OptiMOS™ 5 —
Tipe Transistor N-Channel MOSFET N-channel MOSFET
Drain-Source Voltage (VDS) Max 100 V —
Continuous Drain Current (ID, Tc) 300 A —
On-Resistance RDS(on) Max 1.5 mΩ —
Power Dissipation (PD, Tc) 375 W —
Paket PG-HSOF-8-1 (TOLL) PG-TDSON-8-6
Tipe Mounting Surface Mount Surface Mount
Configuration Single —
Suhu Kerja -55°C to +175°C —
Gate Threshold VGS(th) [DATA_NEEDED: VGS(th) typical and min/max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg at VGS=10V] —
Output Capacitance (Coss) Reduced up to 44% vs prior generation (per manufacturer claim) —
RDS(on) Improvement vs Prior Generation Up to 43% reduction —
Status RoHS Compliant unknown
Packaging Tape & Reel —
Drain-to-Source Voltage — 30 V
Continuous Drain Current at Ta — 21 A
Continuous Drain Current at Tc — 72 A
Power Dissipation at Ta — 2.5 W
Power Dissipation at Tc — 30 W
Technology Family — OptiMOS 5
Jumlah Pin — 8 pins
Exposed Pad — Yes, according to distributor package description
On-State Resistance — [DATA_NEEDED: on-state resistance]
Gate Charge — [DATA_NEEDED: gate charge]
Tegangan Batas Gerbang — [DATA_NEEDED: gate threshold voltage]
Tahanan Panas — [DATA_NEEDED: thermal resistance]
Rentang Suhu Kerja — [DATA_NEEDED: operating temperature range]
AEC-Q100 Qualification — [DATA_NEEDED: AEC-Q100 qualification]
Lead-Free Status — unknown
Halogen-Free Status — unknown
REACH Status — unknown

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