IPTG025N15NM6ATMA1 vs IAUCN08S7N024ATMA1 Perbandingan

Perbandingan bersamaan detil IPTG025N15NM6ATMA1 dari Infineon dan IAUCN08S7N024ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPTG025N15NM6ATMA1 IAUCN08S7N024ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Technology OptiMOS 6 150 V (N-channel trench) OptiMOS 7 trench
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 150 V 80 V
Continuous Drain Current (ID) at TA=25C 26 A —
Continuous Drain Current (ID) at TC=25C 264 A (pulsed) 165 A
Power Dissipation (PD) at TA=25C 3.8 W —
Power Dissipation (PD) at TC=25C 395 W —
On-State Resistance RDS(on) typ 2.5 mOhm at VGS=10 V —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) value] —
Total Gate Charge Qg typ [DATA_NEEDED: Qg value] —
Paket PG-HSOG-8-1 (TOLG) PG-TDSON-8-34 (8-pin, exposed pad)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55 C to +175 C (typical for OptiMOS 6) -55C to +175C (typical automotive)
Status RoHS Compliant —
MSL (Moisture Sensitivity Level) MSL1 (per JEDEC J-STD-020) —
Solder Joint Reliability Excellent - 30% smaller footprint than D2PAK —
Series — Automotive OptiMOS 7 (80 V)
FET Type — N-Channel
Drain-Source On-Resistance (RDS(on)) max — 2.4 mOhm
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/min/max]
Dissipasi Listrik (Ptot) — [DATA_NEEDED: Ptot @ TC=25C]
Automotive Qualification — AEC-Q101
RoHS Compliance — Compliant
Level MSL — [DATA_NEEDED: MSL rating]
Typical Application — 48 V automotive DC-DC, motor drive, load switch

Spek dan Sumber

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