IQD009N06NM5SCATMA1 vs IQE036N08NM6CGATMA1 Perbandingan

Perbandingan bersamaan detil IQD009N06NM5SCATMA1 dari Infineon dan IQE036N08NM6CGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IQD009N06NM5SCATMA1 IQD009N06NM5SCATMA1 - 60V 0.9mOhm N-Ch MOSFET | Infineon

IQD009N06NM5SCATMA1 - 60V 0.9mOhm N-Ch MOSFET | Infineon

IQD009N06NM5SCATMA1 ✓ Aktif
Infineon
IQE036N08NM6CGATMA1 IQE036N08NM6CGATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon

IQE036N08NM6CGATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon

IQE036N08NM6CGATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IQD009N06NM5SCATMA1 IQE036N08NM6CGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Series OptiMOS 5 60V (IQD009N06NM5) —
Polarity / Channel Type N-Channel Enhancement Mode —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID, Ta=25C) 42 A —
Pulsed Drain Current (IDM, Tc) 445 A —
On-Resistance RDS(on) max @ VGS=10V 0.9 mOhm —
Power Dissipation (Ta) 3 W —
Power Dissipation (Tc) 333 W —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS abs max, typical +/-20V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] —
Paket PG-WHSON-8-U02 (PQFN 5x6 mm) PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja [DATA_NEEDED: Tj min/max] -55 C to +175 C (junction, Tj)
Status RoHS Compliant Compliant
Level MSL [DATA_NEEDED: MSL classification] MSL1 (per JEDEC J-STD-020)
Tape and Reel Packaging Yes (suffix SCATMA1) —
Product Family — OptiMOS 6
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (Vds) — 80 V
Gate-Source Voltage (Vgs) — [DATA_NEEDED: Vgs max]
Continuous Drain Current (Id) at Tc — 118 A
Continuous Drain Current (Id) at Ta — 16.7 A
Rds(on) max at Vgs=10V — 3.6 mOhm
Gate Threshold Voltage (Vgs(th)) — 3.5 V (max)
Power Dissipation at Tc — 125 W
Power Dissipation at Ta — 2.5 W
Technology — Trench MOSFET, OptiMOS 6
Configuration — Single N-channel, Source-Down

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