IQDH35N03LM5SCATMA1 vs IQE022N06LM5CGATMA1 Perbandingan

Perbandingan bersamaan detil IQDH35N03LM5SCATMA1 dari Infineon dan IQE022N06LM5CGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IQDH35N03LM5SCATMA1 IQE022N06LM5CGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Tipe Transistor N-Channel MOSFET —
Technology OptiMOS 5 (trench, shielded-gate) N-Channel Power MOSFET (Enhancement Mode)
Drain-Source Voltage (VDS) max 30 V —
Gate-Source Voltage (VGS) max ±20 V —
Continuous Drain Current (ID) at Ta 66 A —
Pulsed Drain Current (IDM) at Tc 700 A —
On-State Resistance (RDS(on)) max 0.35 mOhm @ VGS=10V —
Power Dissipation (PD) at Ta 2.5 W —
Power Dissipation (PD) at Tc 278 W —
Paket PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) PG-TTFN-9-3 (PQFN 3.3x3.3 mm)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55 C to +175 C -55C to +150C
Level MSL 1 (unlimited) —
Status RoHS Compliant Compliant
Marking IQDH35N03LM5S —
Part Family — OptiMOS 5
Drain-Source Voltage (V_DS) — 60 V
Continuous Drain Current (I_D) at T_A=25C — 24 A
Continuous Drain Current (I_D) at T_C=25C — 151 A
R_DS(on) (typical, V_GS=10V) — 2.2 mΩ
Gate-Source Voltage (V_GS) max — [DATA_NEEDED: V_GS max rating]
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) value]
Total Gate Charge (Q_G) — [DATA_NEEDED: Q_G value]
Power Dissipation (T_A) — 2.5 W
Power Dissipation (T_C) — 100 W
Jumlah Pin — 9 (with exposed thermal pad)
Lead-Free — Yes

Spek dan Sumber

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