IQDH35N03LM5SCATMA1 vs IQE022N06LM5CGATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQDH35N03LM5SCATMA1 disebabkan oleh Infineon dan IQE022N06LM5CGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IQDH35N03LM5SCATMA1 IQE022N06LM5CGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Jenis Transistor N-Channel MOSFET —
Technology OptiMOS 5 (trench, shielded-gate) N-Channel Power MOSFET (Enhancement Mode)
Drain-Source Voltage (VDS) max 30 V —
Gate-Source Voltage (VGS) max ±20 V —
Continuous Drain Current (ID) at Ta 66 A —
Pulsed Drain Current (IDM) at Tc 700 A —
On-State Resistance (RDS(on)) max 0.35 mOhm @ VGS=10V —
Power Dissipation (PD) at Ta 2.5 W —
Power Dissipation (PD) at Tc 278 W —
Kemasan PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) PG-TTFN-9-3 (PQFN 3.3x3.3 mm)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55 C to +175 C -55C to +150C
Aras MSL 1 (unlimited) —
Status RoHS Compliant Compliant
Marking IQDH35N03LM5S —
Part Family — OptiMOS 5
Drain-Source Voltage (V_DS) — 60 V
Continuous Drain Current (I_D) at T_A=25C — 24 A
Continuous Drain Current (I_D) at T_C=25C — 151 A
R_DS(on) (typical, V_GS=10V) — 2.2 mΩ
Gate-Source Voltage (V_GS) max — [DATA_NEEDED: V_GS max rating]
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) value]
Total Gate Charge (Q_G) — [DATA_NEEDED: Q_G value]
Power Dissipation (T_A) — 2.5 W
Power Dissipation (T_C) — 100 W
Kiraan Pin — 9 (with exposed thermal pad)
Lead-Free — Yes

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