IQE004NE1LM7CGATMA1 vs ISC0805NLSATMA1 Perbandingan

Perbandingan bersamaan detil IQE004NE1LM7CGATMA1 dari Infineon dan ISC0805NLSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IQE004NE1LM7CGATMA1 IQE004NE1LM7CGATMA1 - 15V OptiMOS 7 0.45mOhm N-FET | Infineon

IQE004NE1LM7CGATMA1 - 15V OptiMOS 7 0.45mOhm N-FET | Infineon

IQE004NE1LM7CGATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IQE004NE1LM7CGATMA1 ISC0805NLSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 7 —
Technology N-Channel Trench Power MOSFET —
Drain-Source Voltage (VDS) 15 V 100 V
Continuous Drain Current (ID, TA=25C) 58 A —
Continuous Drain Current (ID, TC=25C) 379 A —
Power Dissipation (TA=25C) 2.1 W —
Power Dissipation (TC=25C) 89 W —
On-Resistance RDS(on) max 0.45 mOhm at VGS=10 V —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: typical VGS(th)] —
Paket PG-TTFN-9-3 (surface mount) PG-TDSON-8-46 (SuperSO8 5x6)
Tipe Mounting Surface Mount Surface Mount
Suhu Kerja -55C to +150C (junction) —
Status RoHS Compliant Compliant
Level MSL [DATA_NEEDED: MSL rating] —
Packaging Tape & Reel (CGATMA1 suffix) —
Polarization N-Channel —
Product Family — OptiMOS™ 5
Tipe Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at TA=25°C — 13 A
Continuous Drain Current (ID) at TC=25°C — 71 A
Power Dissipation (PD) at TA — 2.5 W
Power Dissipation (PD) at TC — 74 W
On-Resistance RDS(on) max at VGS=10V — 10.7 mΩ at 4.5V VGS; [DATA_NEEDED: RDS(on) max at 10V]
On-Resistance RDS(on) max at VGS=4.5V — 10.7 mΩ
Gate Threshold Voltage VGS(th) typ — 2.3 V
Gate Charge Qg typ at VGS=4.5V — 16 nC
Input Capacitance Ciss — 2.2 nF
Reverse Transfer Capacitance Crss — 23 pF
Output Capacitance Coss — 360 pF
Rentang Suhu Kerja — -55 °C to +150 °C

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