IQE012N03LM5CGATMA1 vs IQE008N03LM5SCATMA1 Perbandingan
Perbandingan bersamaan detil IQE012N03LM5CGATMA1 dari Infineon dan IQE008N03LM5SCATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IQE012N03LM5CGATMA1 | IQE008N03LM5SCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID, Ta) | 34 A | — |
| Pulsed Drain Current (IDM, Tc) | 224 A | — |
| On-Resistance RDS(on), typ | 1.20 mOhm | — |
| Gate-Source Threshold VGS(th) | 1.0 V to 2.4 V (typ, OptiMOS 5 logic-level) | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 107 W | — |
| Technology / Process | OptiMOS 5 trench | — |
| Paket | PG-TTFN-9-3 (PQFN 3.3x3.3 Source-Down, center-gate) | PG-WHSON-8 (Source-Down) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | -55 C to +150 C (TJ) | — |
| Gate Drive (recommended) | 10 V (logic-level compatible) | — |
| Status RoHS | Compliant | Compliant |
| Level MSL | 1 | [DATA_NEEDED: MSL rating] |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 |
| Technology | — | Trench MOSFET (N-Channel) |
| Continuous Drain Current (ID) | — | 252 A |
| On-Resistance (RDS(on)) max | — | 0.85 mΩ at VGS = 10 V |
| Gate Threshold Voltage (VGS(th)) | — | 2 V (typical) |
| Gate Drive Voltage | — | 10 V (recommended) |
| Configuration | — | Single N-Channel |
| Cooling Architecture | — | Source-Down, dual-side cooling |
| Rentang Suhu Kerja | — | -55 °C to +150 °C |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |