IQE050N08NM5CGATMA1 vs BSC019N08NS5ATMA1 Perbandingan

Perbandingan bersamaan detil IQE050N08NM5CGATMA1 dari Infineon dan BSC019N08NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IQE050N08NM5CGATMA1 BSC019N08NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (Ta) 16 A —
Continuous Drain Current (Tc) 101 A —
On-Resistance RDS(on) Max 5.0 mΩ —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 100 W —
Paket PG-TTFN-9-1 (Surface Mount) PG-TSON-8-3 (SuperSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Technology OptiMOS 5 (Source-Down) OptiMOS 5 (N-channel trench)
Gate Threshold Vgs(th) Typ [DATA_NEEDED: Vgs(th) typical value] —
Suhu Kerja -55°C to +175°C (TJ max) —
Total Gate Charge Qg Typ [DATA_NEEDED: total gate charge Qg typical] —
Status RoHS Compliant Compliant
Level MSL [DATA_NEEDED: MSL rating] 1
Manufacturer — Infineon Technologies
Polarity — N-Channel
Drain-Source Voltage (VDS) max — 80 V
Gate-Source Voltage (VGS) max — ±20 V
Continuous Drain Current (ID) at TA=25C — 28 A
Continuous Drain Current (ID) at TC=25C — 237 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) max at VGS=10V — 1.9 mOhm
Gate Threshold Voltage VGS(th) typ — 3.0 V
Total Gate Charge Qg — [DATA_NEEDED: total gate charge Qg]
Power Dissipation (TA=25C) — 3 W
Power Dissipation (TC=25C) — 214 W
Rentang Suhu Kerja — -55 C to +150 C
Avalanche Rated — Yes

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