IQE050N08NM5CGATMA1 vs BSC019N08NS5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQE050N08NM5CGATMA1 disebabkan oleh Infineon dan BSC019N08NS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IQE050N08NM5CGATMA1 BSC019N08NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (Ta) 16 A —
Continuous Drain Current (Tc) 101 A —
On-Resistance RDS(on) Max 5.0 mΩ —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 100 W —
Kemasan PG-TTFN-9-1 (Surface Mount) PG-TSON-8-3 (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS 5 (Source-Down) OptiMOS 5 (N-channel trench)
Gate Threshold Vgs(th) Typ [DATA_NEEDED: Vgs(th) typical value] —
Suhu Operasi -55°C to +175°C (TJ max) —
Total Gate Charge Qg Typ [DATA_NEEDED: total gate charge Qg typical] —
Status RoHS Compliant Compliant
Aras MSL [DATA_NEEDED: MSL rating] 1
Manufacturer — Infineon Technologies
Polarity — N-Channel
Drain-Source Voltage (VDS) max — 80 V
Gate-Source Voltage (VGS) max — ±20 V
Continuous Drain Current (ID) at TA=25C — 28 A
Continuous Drain Current (ID) at TC=25C — 237 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) max at VGS=10V — 1.9 mOhm
Gate Threshold Voltage VGS(th) typ — 3.0 V
Total Gate Charge Qg — [DATA_NEEDED: total gate charge Qg]
Power Dissipation (TA=25C) — 3 W
Power Dissipation (TC=25C) — 214 W
Gambaran Suhu Operasi — -55 C to +150 C
Avalanche Rated — Yes

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga