IQE220N15NM5CGSCATMA1 vs IPC90N04S5L3R3ATMA1 Perbandingan

Perbandingan bersamaan detil IQE220N15NM5CGSCATMA1 dari Infineon dan IPC90N04S5L3R3ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IQE220N15NM5CGSCATMA1 IQE220N15NM5CGSCATMA1 - 150V 44A OptiMOS 5 N-MOSFET | Infineon

IQE220N15NM5CGSCATMA1 - 150V 44A OptiMOS 5 N-MOSFET | Infineon

IQE220N15NM5CGSCATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IQE220N15NM5CGSCATMA1 IPC90N04S5L3R3ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 —
FET Type N-Channel N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) 150 V 40 V
Continuous Drain Current at Ta (ID) 7 A —
Continuous Drain Current at Tc (ID) 44 A —
Power Dissipation at Ta (PD) 2.5 W —
Power Dissipation at Tc (PD) 100 W —
On-Resistance (RDS(on)) 22 milliohm (max) —
Gate Threshold Voltage (VGS(th)) 4.6 V —
Paket PG-WHTFN-9 (Source-Down) PG-TDSON-8-34 (TDSON-8)
Tipe Mounting Surface Mount Surface Mount
Technology OptiMOS 5, Source-Down —
Rentang Suhu Kerja -55C to +150C (junction) —
Status RoHS Compliant —
Product Family — OptiMOS 5 40V
Continuous Drain Current (ID) at TC=25°C — 90 A
On-Resistance RDS(on) max at VGS=10V — 3.3 mΩ
On-Resistance RDS(on) at VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage VGS(th) — 1.7 V to 2.7 V (logic level)
Total Power Dissipation (TC=25°C) — 62 W
Suhu Hubung Kerja — -55°C to +175°C
Storage Temperature Range — [DATA_NEEDED: storage temp range]
MSL Moisture Sensitivity — MSL1 (per JEDEC J-STD-020)
Peak Reflow Temperature — 260°C
Qualification — AEC-Q101 automotive qualified
Avalanche Tested — 100% (production-level)
RoHS Compliance — Compliant (Green Product)

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IQE220N15NM5CGSCATMA1

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