IQE220N15NM5CGSCATMA1 vs IPC90N04S5L3R3ATMA1 비교
다음의 상세 나란히 비교: IQE220N15NM5CGSCATMA1 제조: Infineon 및 IPC90N04S5L3R3ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IQE220N15NM5CGSCATMA1 | IPC90N04S5L3R3ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $2.18 | $0.96 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| FET Type | N-Channel | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | 150 V | 40 V |
| Continuous Drain Current at Ta (ID) | 7 A | — |
| Continuous Drain Current at Tc (ID) | 44 A | — |
| Power Dissipation at Ta (PD) | 2.5 W | — |
| Power Dissipation at Tc (PD) | 100 W | — |
| On-Resistance (RDS(on)) | 22 milliohm (max) | — |
| Gate Threshold Voltage (VGS(th)) | 4.6 V | — |
| 패키지 | PG-WHTFN-9 (Source-Down) | PG-TDSON-8-34 (TDSON-8) |
| 실장 유형 | Surface Mount | Surface Mount |
| Technology | OptiMOS 5, Source-Down | — |
| 동작 온도 범위 | -55C to +150C (junction) | — |
| RoHS 상태 | Compliant | — |
| Product Family | — | OptiMOS 5 40V |
| Continuous Drain Current (ID) at TC=25°C | — | 90 A |
| On-Resistance RDS(on) max at VGS=10V | — | 3.3 mΩ |
| On-Resistance RDS(on) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage VGS(th) | — | 1.7 V to 2.7 V (logic level) |
| Total Power Dissipation (TC=25°C) | — | 62 W |
| 동작 접합 온도 | — | -55°C to +175°C |
| Storage Temperature Range | — | [DATA_NEEDED: storage temp range] |
| MSL Moisture Sensitivity | — | MSL1 (per JEDEC J-STD-020) |
| Peak Reflow Temperature | — | 260°C |
| Qualification | — | AEC-Q101 automotive qualified |
| Avalanche Tested | — | 100% (production-level) |
| RoHS Compliance | — | Compliant (Green Product) |