IQEH68NE2LM7UCGATMA1 vs IQD020N10NM5CGATMA1 Perbandingan
Perbandingan bersamaan detil IQEH68NE2LM7UCGATMA1 dari Infineon dan IQD020N10NM5CGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IQEH68NE2LM7UCGATMA1 - 25V OptiMOS 7 N-MOSFET, 338A | Infineon
IQEH68NE2LM7UCGATMA1 ✓ AktifInfineon
IQD020N10NM5CGATMA1 - 100V 2.0mΩ OptiMOS™ 5 N-MOSFET | Infineon
IQD020N10NM5CGATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IQEH68NE2LM7UCGATMA1 | IQD020N10NM5CGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 7 | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 25 V | 100 V |
| Continuous Drain Current (ID) @ Ta | 47 A | — |
| Pulsed Drain Current (IDM) @ Tc | 338 A | — |
| Power Dissipation (PD) @ Ta | 2.5 W | — |
| Power Dissipation (PD) @ Tc | 130 W | — |
| Gate Threshold Voltage Type | Logic-level (per OptiMOS 7 family) | — |
| On-Resistance Family | RDS(on)10 / RDS(on)45 (10V and 4.5V rated) | — |
| Maximum Junction Temperature | 175 °C | — |
| Rentang Suhu Kerja | -55 °C to +175 °C (typical for OptiMOS 7) | -55°C to +175°C |
| Paket | PG-TTFN-9-3 (surface mount) | PG-TTFN-9-U02 (PQFN 5x6 mm²) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | [DATA_NEEDED: MSL Level] | [DATA_NEEDED: MSL rating from datasheet] |
| Status RoHS | Compliant (per distributor listing) | Compliant |
| Technology | OptiMOS 7 trench MOSFET | OptiMOS™ 5 N-channel trench MOSFET |
| Packaging | Tape & Reel (per ATMA1 suffix) | — |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current (ID) at TA=25°C | — | 26 A |
| Continuous Drain Current (ID) at TC=25°C | — | [DATA_NEEDED: ID at TC=25°C from datasheet curve] |
| Pulsed Drain Current (IDM) at TC=25°C | — | 273 A |
| Static Drain-Source On-Resistance RDS(on) max | — | 2.0 mΩ (at VGS=10V) |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 333 W |
| Qualification | — | Industrial grade (Infineon OptiMOS™ 5 family) |