IR2011STRPBF vs IR21531STRPBF Perbandingan

Perbandingan bersamaan detil IR2011STRPBF dari Infineon dan IR21531STRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IR2011STRPBF IR21531STRPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Configuration High-Side and Low-Side (Independent) Half-Bridge
Number of Drivers 2 (Half-Bridge) —
Peak Source Current 1 A (typical) —
Peak Sink Current 1 A (typical) —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Floating Supply Voltage (VBS) 10 V to 20 V (operational to +200 V) —
Logic Input Compatibility 3.0 V CMOS or LSTTL —
Propagation Delay (typ.) 80 ns —
Turn-On Rise Time (typ.) 35 ns —
Turn-Off Fall Time (typ.) 20 ns —
Offset Voltage Rating 200 V —
Negative Transient Tolerance dV/dt immune —
Suhu Kerja -40 C to +125 C -40C to +125C
Paket 8-SOIC (3.90 mm body width) 8-pin SOIC (SO-8)
Tipe Mounting Surface Mount Surface Mount
Lead-Free / RoHS Lead-Free, RoHS Compliant —
Driver Type — High-side and Low-side, self-oscillating
Jumlah Output — 2 (high-side, low-side)
Supply Voltage (VCC) — 10 V to 20 V
Internal VCC Clamp — 15.6 V
High-Side Offset Voltage — up to 600 V
Peak Source/Sink Current — 250 mA
Waktu naik — 80 ns
Waktu Menurun — 45 ns
Dead-Time — 0.6 microseconds (typical)
Oscillator — External RC programmable
Bootstrap Diode — Integrated
Input Logic — CMOS Schmitt-trigger (RC timing)
Lead Finish — Pb-free (PBF suffix)
Status RoHS — Compliant (ROHS3)

Spek dan Sumber

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