IR2109STRPBF vs IR2304SPBF Perbandingan

Perbandingan bersamaan detil IR2109STRPBF dari Infineon dan IR2304SPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IR2109STRPBF IR2304SPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Half-Bridge Gate Driver IC Half-Bridge Gate Driver IC
Configuration Half-Bridge (High-Side + Low-Side) High and Low Side, Independent Channels
Jumlah Output 2 (High-Side / Low-Side) 2
High-Side Offset Voltage (Max) 600 V —
Supply Voltage (VCC) 10 V to 20 V —
Peak Source Output Current 0.2 A (typ) —
Peak Sink Output Current 0.35 A (typ) —
Propagation Delay (typ) 750 ns —
Rise/Fall Time (typ) [DATA_NEEDED: rise/fall time] —
ton / toff (typ) 540 ns —
Input Logic Non-Inverting —
UVLO Yes (VCC and VBS) —
Bootstrap Diode Integrated —
Dead Time Control Built-in —
dV/dt Immunity Yes —
Negative VS Transient Tolerance Yes —
Paket 8-SOIC (3.90 mm Width) 8-Pin SOIC (SO-8 N)
Tipe Mounting Surface Mount Surface Mount
Suhu Kerja -40 C to +125 C —
Status RoHS Compliant Compliant (Pb-free)
Maximum Offset (Bootstrap) Voltage — 600 V
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Output Source/Sink Current — 60 mA / 130 mA
Propagation Delay (Typical) — 220 ns
Input Logic Compatibility — 3.3 V, 5 V, 15 V
Undervoltage Lockout (UVLO) — Both High-Side and Low-Side Channels
Negative Transient Voltage Tolerance — Yes (dV/dt immune)
Logic Input Polarity — Non-Inverting
Rentang Suhu Kerja — -40 C to +125 C
Technology — HVIC + Latch-Immune CMOS, Monolithic

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