IR2109STRPBF vs IR2304SPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IR2109STRPBF disebabkan oleh Infineon dan IR2304SPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IR2109STRPBF IR2304SPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Half-Bridge Gate Driver IC Half-Bridge Gate Driver IC
Configuration Half-Bridge (High-Side + Low-Side) High and Low Side, Independent Channels
Bilangan Output 2 (High-Side / Low-Side) 2
High-Side Offset Voltage (Max) 600 V —
Supply Voltage (VCC) 10 V to 20 V —
Peak Source Output Current 0.2 A (typ) —
Peak Sink Output Current 0.35 A (typ) —
Propagation Delay (typ) 750 ns —
Rise/Fall Time (typ) [DATA_NEEDED: rise/fall time] —
ton / toff (typ) 540 ns —
Input Logic Non-Inverting —
UVLO Yes (VCC and VBS) —
Bootstrap Diode Integrated —
Dead Time Control Built-in —
dV/dt Immunity Yes —
Negative VS Transient Tolerance Yes —
Kemasan 8-SOIC (3.90 mm Width) 8-Pin SOIC (SO-8 N)
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi -40 C to +125 C —
Status RoHS Compliant Compliant (Pb-free)
Maximum Offset (Bootstrap) Voltage — 600 V
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Output Source/Sink Current — 60 mA / 130 mA
Propagation Delay (Typical) — 220 ns
Input Logic Compatibility — 3.3 V, 5 V, 15 V
Undervoltage Lockout (UVLO) — Both High-Side and Low-Side Channels
Negative Transient Voltage Tolerance — Yes (dV/dt immune)
Logic Input Polarity — Non-Inverting
Gambaran Suhu Operasi — -40 C to +125 C
Technology — HVIC + Latch-Immune CMOS, Monolithic

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