IR2114SSPBF vs IRS2011STRPBF Perbandingan

Perbandingan bersamaan detil IR2114SSPBF dari Infineon dan IRS2011STRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IR2114SSPBF IRS2011STRPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Configuration Half-bridge gate driver High-Side and Low-Side, Independent Channels
Jumlah Output 2 (high-side + low-side) 2
Topologi Non-inverting —
Offset (high-side) Voltage (max) 600 V —
Gate Drive Supply (VCC) 10 V to 20 V —
Logic Supply (VDD) 10 V to 20 V —
Bootstrap Supply (VBS) 10 V to 25 V (with respect to VS) —
Source Current (typ.) 2 A —
Sink Current (typ.) 3 A —
Rise / Fall Time (typ.) [DATA_NEEDED: rise/fall time] —
Propagation Delay (typ.) 50 ns —
Input Logic Compatibility 3.3 V / 5 V CMOS/LSTTL —
UVLO Thresholds VCC and VBS, internally set —
Integrated Bootstrap Diode Yes —
Over-Current Shutdown Yes (programmable, with FAULT output) —
Suhu Kerja -40 C to +125 C -40 C to +125 C
Paket 24-SSOP (7.80 mm wide, 1.75 mm height) 8-SOIC (DSO-8)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant (PBF suffix)
Fungsi — Half-Bridge Gate Driver
Maximum Offset Voltage (High-Side) — 200 V
Output Current (Source / Sink) — 1 A typical / 1 A typical
Propagation Delay (ton/toff) — 60 ns typical
Delay Matching — 20 ns maximum
Logic Input Compatibility — 3.3 V CMOS / LSTTL
Bootstrap Supply — Integrated bootstrap diode, floating channel
Supply Voltage (VCC) — 10 V to 20 V
Negative Transient Tolerance — Yes, dV/dt immune
Suitable Drivers — MOSFETs and IGBTs

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