IRF1405PBF vs IRLB4132PBF Perbandingan
Perbandingan bersamaan detil IRF1405PBF dari Infineon dan IRLB4132PBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRF1405PBF | IRLB4132PBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Part Number Suffix | PbF (lead-free, RoHS compliant) | — |
| Tipe Transistor | N-Channel MOSFET | N-Channel MOSFET (HEXFET) |
| Technology | HEXFET (Stripe Planar cell structure) | — |
| Drain-Source Voltage (V_DS) | 55 V | — |
| Continuous Drain Current (I_D, Tc=25C) | 169 A | — |
| Continuous Drain Current (I_D, Tc=100C) | [DATA_NEEDED: I_D at Tc=100C] | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current rating] | — |
| Maximum Power Dissipation (P_D, Tc=25C) | 330 W | — |
| R_DS(on) Maximum | 5.3 mOhm @ V_GS = 10 V | — |
| Gate Threshold Voltage (V_GS(th)) | 2.0 V to 4.0 V | — |
| Maximum Gate-Source Voltage (V_GS) | [DATA_NEEDED: maximum V_GS rating] | — |
| Operating Junction Temperature (T_J max) | 175 C | — |
| Storage Temperature Range | [DATA_NEEDED: storage temperature range] | — |
| Paket | TO-220AB (through-hole) | — |
| Tipe Mounting | Through Hole | Through Hole |
| Qualification | JEDEC qualified, optimized for switching below 100 kHz | — |
| Status RoHS | PbF suffix indicates lead-free / RoHS compliant | — |
| Single Pulse Avalanche Energy (E_AS) | [DATA_NEEDED: avalanche energy rating] | — |
| Thermal Resistance Junction-to-Case (R_theta_JC) | [DATA_NEEDED: thermal resistance R_theta_JC] | — |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID, Tc=25C) | — | 78 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissipation (PD, Tc=25C) | — | 140 W |
| On-Resistance (RDS(on), VGS=10V) | — | 3.5 mOhm (typical) |
| On-Resistance (RDS(on), VGS=4.5V) | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th), typical) | — | 1.0 V to 2.5 V |
| Gate Charge (Qg, typical) | — | [DATA_NEEDED: total gate charge] |
| Maximum Junction Temperature | — | 175 C |
| Rentang Suhu Kerja | — | -55 C to +175 C |
| Paket / Case | — | TO-220AB (through-hole, 3 leads) |
| Lead-Free / RoHS | — | Yes (Pb-free PBF suffix) |
| AEC-Q101 Automotive Qualification | — | Not qualified (industrial/commercial) |