IRF5305PBF vs IRF5305STRLPBF Perbandingan

Perbandingan bersamaan detil IRF5305PBF dari Infineon dan IRF5305STRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IRF5305STRLPBF IRF5305STRLPBF - 55V P-Ch MOSFET 31A 60mΩ | Infineon

IRF5305STRLPBF - 55V P-Ch MOSFET 31A 60mΩ | Infineon

IRF5305STRLPBF ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IRF5305PBF IRF5305STRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type P-Channel —
Drain-to-Source Voltage (VDS) -55 V —
Continuous Drain Current (ID) at TC=25C -31 A -31 A
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Maximum Power Dissition (PD) at TC=25C 110 W —
Gate-to-Source Voltage (VGS) max ±20 V —
Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V 60 mOhm (typical) —
Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V ID=-16A [DATA_NEEDED: max RDS(on) at -10V] —
Total Gate Charge (Qg) 42 nC (typical) 42 nC (Mouser listing) / 63 nC (Future Electronics listing)
Gate-to-Drain Charge (Qgd) [DATA_NEEDED: Qgd] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Output Capacitance (Coss) [DATA_NEEDED: Coss] —
Turn-On Delay Time (td(on)) [DATA_NEEDED: td(on)] —
Turn-Off Delay Time (td(off)) [DATA_NEEDED: td(off)] —
Thermal Resistance, Junction-to-Case (RthJC) [DATA_NEEDED: RthJC] —
Thermal Resistance, Junction-to-Ambient (RthJA) [DATA_NEEDED: RthJA] —
Suhu Hubung Kerja -55C to +175C —
Paket TO-220AB (through-hole, 3-pin + tab) TO-263 / D2PAK (surface mount)
Tipe Mounting Through Hole Surface Mount
Lead-Free Plating (PBF suffix) Yes (Pb-free) —
Status RoHS Compliant —
Technology HEXFET (planar DMOS) HEXFET (fifth generation), IR MOSFET
Polarity / Channel Type — P-Channel
Drain-Source Voltage (VDS) — -55 V
Continuous Drain Current (ID) at TA=25C — [DATA_NEEDED: ID at TA=25C]
RDS(on) max at VGS=-10V — 60 mOhm
RDS(on) max at VGS=-4.5V — [DATA_NEEDED: RDS(on) at VGS=-4.5V]
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) typ]
Maximum Power Dissition at Tc — 110 W
Maximum Power Dissipation at TA — 3.8 W
Rentang Suhu Kerja — [DATA_NEEDED: Tj max / operating range]
Packaging — Tape & Reel (TR), 800 pcs per reel
Lead-Free / RoHS — Yes (Pb-free suffix PBF)

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