IRF5305STRLPBF vs IRFR5305TRLPBF Perbandingan

Perbandingan bersamaan detil IRF5305STRLPBF dari Infineon dan IRFR5305TRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IRF5305STRLPBF IRF5305STRLPBF - 55V P-Ch MOSFET 31A 60mΩ | Infineon

IRF5305STRLPBF - 55V P-Ch MOSFET 31A 60mΩ | Infineon

IRF5305STRLPBF ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IRF5305STRLPBF IRFR5305TRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity / Channel Type P-Channel P-Channel
Drain-Source Voltage (VDS) -55 V -55 V
Continuous Drain Current (ID) at TC=25C -31 A —
Continuous Drain Current (ID) at TA=25C [DATA_NEEDED: ID at TA=25C] —
RDS(on) max at VGS=-10V 60 mOhm 65 mΩ
RDS(on) max at VGS=-4.5V [DATA_NEEDED: RDS(on) at VGS=-4.5V] —
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) typ] —
Total Gate Charge (Qg) 42 nC (Mouser listing) / 63 nC (Future Electronics listing) —
Maximum Power Dissition at Tc 110 W —
Maximum Power Dissipation at TA 3.8 W —
Paket TO-263 / D2PAK (surface mount) TO-252AA (DPAK), surface mount
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja [DATA_NEEDED: Tj max / operating range] —
Technology HEXFET (fifth generation), IR MOSFET HEXFET fifth-generation planar MOSFET
Packaging Tape & Reel (TR), 800 pcs per reel —
Lead-Free / RoHS Yes (Pb-free suffix PBF) Yes (Pb-free, suffix "PBF")
Continuous Drain Current (ID) at Tc=25C — -31 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max — ±20 V
RDS(on) max at VGS=-5V — [DATA_NEEDED: RDS(on) at VGS=-5V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) range]
Power Dissipation (PD) at Tc=25C — 110 W
Suhu Hubung Kerja — -55C to +175C
Avalanche Rated — Yes (fully avalanche rated)
Tape & Reel Orientation — Left orientation (TRLPBF = Tape & Reel, Left)

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