IRF7205TRPBF vs IRF7342TRPBF Perbandingan

Perbandingan bersamaan detil IRF7205TRPBF dari Infineon dan IRF7342TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRF7205TRPBF IRF7342TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type P-Channel MOSFET —
Technology IR HEXFET (4th generation) HEXFET Power MOSFET (Fifth Generation), P-Channel
Drain-to-Source Voltage (VDS) -30 V —
Continuous Drain Current (ID) at TA=25°C -4.6 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
On-Resistance RDS(on) max @ VGS=-10V 70 mΩ —
On-Resistance RDS(on) max @ VGS=-4.5V 130 mΩ —
Gate Threshold Voltage VGS(th) -1.0 V to -3.0 V —
Total Gate Charge Qg 27 nC —
Dissipasi Listrik (TC=25°C) 2.5 W —
Suhu Hubung Kerja -55 °C to +150 °C —
Paket SO-8 (8-SO) 8-SOIC (SO-8), surface mount
Tipe Mounting Surface Mount Surface Mount
RoHS / Lead-Free Lead-Free (PBF suffix), RoHS compliant —
Packaging Tape & Reel (TR suffix) Tape and Reel (TR)
Part Number — IRF7342TRPBF
Manufacturer — Infineon Technologies (formerly International Rectifier)
Configuration — Dual P-Channel MOSFET Array (two independent P-FETs in one package)
Drain-Source Voltage (Vds) — -55 V
Continuous Drain Current (Id) — -3.4 A at 25 C
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current]
Gate Threshold Voltage (Vgs(th)) — -1.0 V to -3.0 V (typ -1.7 V)
Drain-Source On-Resistance (RDS(on)) — 0.105 ohm max at VGS = -10 V
Maximum Power Dissumption (Pd) — 2 W
Rentang Suhu Kerja — -55 C to +150 C (Tj)
Lead-Free / RoHS — Yes (PBF suffix indicates lead-free, RoHS compliant)
Channel Type — P-Channel (enhancement mode)
Number of Channels — 2 (dual array)

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon