IRFB4110PBF vs IRF3007STRLPBF Perbandingan

Perbandingan bersamaan detil IRFB4110PBF dari Infineon dan IRF3007STRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFB4110PBF IRF3007STRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Status Stok In Stock —
Harga Unit (USD) $1,55 —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25°C 120 A (bond-wire limited) —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
On-Resistance RDS(on) max at VGS=10V 4.5 mΩ —
On-Resistance RDS(on) typ at VGS=10V 3.7 mΩ —
Power Dissipation (PD) at TC=25°C 370 W —
Suhu Hubung Kerja -55 °C to +175 °C -55°C to +175°C
Paket TO-220AB (through-hole) —
Technology HEXFET (planar DMOS) —
Tipe Mounting Through Hole Surface Mount
Status RoHS Compliant (Pb-free suffix) Compliant (Lead-Free, PBF suffix)
Lead-Free Yes (PBF suffix denotes Pb-free) —
Polarity — N-Channel
MOSFET Operating Mode — Enhancement
Drain-to-Source Breakdown Voltage (V(BR)DSS) — 75 V
Continuous Drain Current (Id) at Tc=25°C — 62 A
Pulsed Drain Current (Idm) — 250 A
Static Drain-to-Source On-Resistance (RDS(on)) — 12.6 mΩ typical at VGS=10V
Gate-to-Source Threshold Voltage (VGS(th)) — 2.0 V to 4.0 V
Total Gate Charge (Qg) — 110 nC typical
Maximum Power Dissipation (Pd) — 120 W at Tc=25°C
Thermal Resistance Junction-to-Case (RθJC) — 1.0 °C/W
Thermal Resistance Junction-to-Ambient (RθJA) — 40 °C/W
Package Type — D2PAK (TO-263), 3-pin (2+Tab), Surface Mount
Avalanche Rated — Yes (Repetitive Avalanche Allowed up to Tjmax)

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