IRFL4315TRPBF vs IRF7306TRPBF Perbandingan

Perbandingan bersamaan detil IRFL4315TRPBF dari Infineon dan IRF7306TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFL4315TRPBF IRF7306TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel MOSFET —
Drain-to-Source Voltage (V_DS) 150 V —
Continuous Drain Current (I_D) at 25°C 2.6 A —
Pulsed Drain Current (I_DM) [DATA_NEEDED: I_DM rating] —
R_DS(on) max at V_GS=10V 185 mΩ —
Gate Threshold Voltage V_GS(th) [DATA_NEEDED: V_GS(th) typ/min/max] —
Total Gate Charge Q_G 12 nC —
Gate-to-Source Voltage V_GS ±30 V (max) —
Continuous Source Current (Body Diode I_S) 1.6 A —
di/dt (Body Diode) 230 A/μs —
Power Dissipation (Ta) 2.8 W —
Rentang Suhu Kerja [DATA_NEEDED: T_J min/max] -55°C to +150°C (junction)
Paket SOT-223 8-SOIC (SO-8, 0.154 inch / 3.90 mm body width)
Tipe Mounting Surface Mount Surface Mount
Technology IR MOSFET™ (planar/HEXFET-style) HEXFET Power MOSFET (Generation V)
Qualification Standard Industrial market (per Infineon datasheet) —
Lead-Free / RoHS Lead-free (PBF suffix); RoHS compliant —
Packaging Tape & Reel (TRPBF) Tape & Reel (TR)
Polarity — P-Channel (dual)
Number of Channels — 2 (independent, in single package)
Drain-to-Source Voltage (VDS) — -30 V
Continuous Drain Current (ID) — -3.6 A at 25°C
On-Resistance RDS(on) max — 100 mOhm at VGS = -10 V
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge Qg — [DATA_NEEDED: Qg total]
Maximum Power Dissipation — 2 W at TA = 25°C
Level MSL — 1 (per JEDEC J-STD-020)
RoHS Compliance — Yes (PBF suffix indicates Pb-free)
Qualification — Consumer market qualification standards (per IR/Infineon datasheet)
Avalanche Rated — Yes (ruggedized device per datasheet)

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