IRFR3710ZTRLPBF vs BSS123NH6327XTSA1 Perbandingan

Perbandingan bersamaan detil IRFR3710ZTRLPBF dari Infineon dan BSS123NH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSS123NH6327XTSA1 BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IRFR3710ZTRLPBF BSS123NH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel, Enhancement Mode
Technology MOSFET (Metal Oxide), HEXFET —
Drain to Source Voltage (Vdss) 100 V —
Continuous Drain Current (Id) @ 25C (Tc) 42 A —
Max Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
RDS(on) max @ VGS=10V 18 mOhm —
Gate-Source Voltage (Vgs) max [DATA_NEEDED: Vgs max rating] —
Gate Threshold Voltage (Vgs(th) typ) [DATA_NEEDED: Vgs(th)] —
Total Gate Charge (Qg) 69 nC —
Power Dissipation (Pd) @ Tc=25C 140 W —
Avalanche Energy Rating (EAS) 150 mJ —
Maximum Junction Temperature 175 C —
Paket TO-252AA (DPAK), 3-pin (2+tab) PG-SOT23 (SOT-23-3)
Tipe Mounting Surface Mount Surface Mount
Automotive Qualification AEC-Q101 (per Lisleapex listing) —
Configuration Single with built-in diode —
Suhu Kerja -55 C to +175 C (TJ) —
Status RoHS Compliant (Pb-free PBF suffix) —
Manufacturer — Infineon Technologies
Part Number — BSS123NH6327XTSA1
Part Status — Active
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) — 190 mA (Ta)
Power Dissipation (PD) — 500 mW (Ta)
RDS(on) Max — 6 Ω @ VGS = 10 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical and max VGS(th)]
Gate-Source Voltage Max (VGS) — ±20 V
Rentang Suhu Kerja — -55 °C to +150 °C (junction)
Qualification — AEC-Q101 (automotive)
RoHS Compliance — Yes (Pb-free lead plating)
Level MSL — 1 (per JEDEC J-STD-020)

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