IRFR3710ZTRLPBF vs BSS123NH6327XTSA1 比較

詳細並排比較 IRFR3710ZTRLPBF 由 Infineon 與 BSS123NH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRFR3710ZTRLPBF IRFR3710ZTRLPBF - 100V 42A HEXFET N-MOSFET DPAK | Infineon

IRFR3710ZTRLPBF - 100V 42A HEXFET N-MOSFET DPAK | Infineon

IRFR3710ZTRLPBF ✓ 啟用中
Infineon
BSS123NH6327XTSA1 BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 ✓ 啟用中

規格比較

參數 IRFR3710ZTRLPBF BSS123NH6327XTSA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel N-Channel, Enhancement Mode
Technology MOSFET (Metal Oxide), HEXFET —
Drain to Source Voltage (Vdss) 100 V —
Continuous Drain Current (Id) @ 25C (Tc) 42 A —
Max Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
RDS(on) max @ VGS=10V 18 mOhm —
Gate-Source Voltage (Vgs) max [DATA_NEEDED: Vgs max rating] —
Gate Threshold Voltage (Vgs(th) typ) [DATA_NEEDED: Vgs(th)] —
Total Gate Charge (Qg) 69 nC —
Power Dissipation (Pd) @ Tc=25C 140 W —
Avalanche Energy Rating (EAS) 150 mJ —
Maximum Junction Temperature 175 C —
封裝 TO-252AA (DPAK), 3-pin (2+tab) PG-SOT23 (SOT-23-3)
安裝類型 Surface Mount Surface Mount
Automotive Qualification AEC-Q101 (per Lisleapex listing) —
Configuration Single with built-in diode —
工作溫度 -55 C to +175 C (TJ) —
RoHS 狀態 Compliant (Pb-free PBF suffix) —
Manufacturer — Infineon Technologies
Part Number — BSS123NH6327XTSA1
Part Status — Active
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) — 190 mA (Ta)
Power Dissipation (PD) — 500 mW (Ta)
RDS(on) Max — 6 Ω @ VGS = 10 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical and max VGS(th)]
Gate-Source Voltage Max (VGS) — ±20 V
工作溫度範圍 — -55 °C to +150 °C (junction)
Qualification — AEC-Q101 (automotive)
RoHS Compliance — Yes (Pb-free lead plating)
MSL 等級 — 1 (per JEDEC J-STD-020)

資料表與資源

瀏覽所有產品 建立 BOM 索取報價