IRFR3710ZTRPBF vs IRFR3710ZTRLPBF Perbandingan
Perbandingan bersamaan detil IRFR3710ZTRPBF dari Infineon dan IRFR3710ZTRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRFR3710ZTRPBF | IRFR3710ZTRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25C | 56 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM] | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Static Drain-Source On-Resistance RDS(on) max at VGS=10V | 18 mOhm | — |
| Power Dissipation (PD) at TC=25C | 140 W | — |
| Suhu Hubung Kerja | -55C to +175C | — |
| Technology | HEXFET (IR MOSFET) | MOSFET (Metal Oxide), HEXFET |
| Paket | TO-252AA (DPAK) | TO-252AA (DPAK), 3-pin (2+tab) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant (Pb-free PBF suffix) |
| Lead-Free | Yes | — |
| Drain to Source Voltage (Vdss) | — | 100 V |
| Continuous Drain Current (Id) @ 25C (Tc) | — | 42 A |
| Max Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max @ VGS=10V | — | 18 mOhm |
| Gate-Source Voltage (Vgs) max | — | [DATA_NEEDED: Vgs max rating] |
| Gate Threshold Voltage (Vgs(th) typ) | — | [DATA_NEEDED: Vgs(th)] |
| Total Gate Charge (Qg) | — | 69 nC |
| Power Dissipation (Pd) @ Tc=25C | — | 140 W |
| Avalanche Energy Rating (EAS) | — | 150 mJ |
| Maximum Junction Temperature | — | 175 C |
| Automotive Qualification | — | AEC-Q101 (per Lisleapex listing) |
| Configuration | — | Single with built-in diode |
| Suhu Kerja | — | -55 C to +175 C (TJ) |