IRFR5305TRLPBF vs IRF5305STRLPBF Perbandingan

Perbandingan bersamaan detil IRFR5305TRLPBF dari Infineon dan IRF5305STRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IRF5305STRLPBF IRF5305STRLPBF - 55V P-Ch MOSFET 31A 60mΩ | Infineon

IRF5305STRLPBF - 55V P-Ch MOSFET 31A 60mΩ | Infineon

IRF5305STRLPBF ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IRFR5305TRLPBF IRF5305STRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity / Channel Type P-Channel P-Channel
Drain-Source Voltage (VDS) -55 V -55 V
Continuous Drain Current (ID) at Tc=25C -31 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max ±20 V —
RDS(on) max at VGS=-10V 65 mΩ 60 mOhm
RDS(on) max at VGS=-5V [DATA_NEEDED: RDS(on) at VGS=-5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) range] —
Power Dissipation (PD) at Tc=25C 110 W —
Suhu Hubung Kerja -55C to +175C —
Paket TO-252AA (DPAK), surface mount TO-263 / D2PAK (surface mount)
Tipe Mounting Surface Mount Surface Mount
Technology HEXFET fifth-generation planar MOSFET HEXFET (fifth generation), IR MOSFET
Avalanche Rated Yes (fully avalanche rated) —
Lead-Free / RoHS Yes (Pb-free, suffix "PBF") Yes (Pb-free suffix PBF)
Tape & Reel Orientation Left orientation (TRLPBF = Tape & Reel, Left) —
Continuous Drain Current (ID) at TC=25C — -31 A
Continuous Drain Current (ID) at TA=25C — [DATA_NEEDED: ID at TA=25C]
RDS(on) max at VGS=-4.5V — [DATA_NEEDED: RDS(on) at VGS=-4.5V]
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) typ]
Total Gate Charge (Qg) — 42 nC (Mouser listing) / 63 nC (Future Electronics listing)
Maximum Power Dissition at Tc — 110 W
Maximum Power Dissipation at TA — 3.8 W
Rentang Suhu Kerja — [DATA_NEEDED: Tj max / operating range]
Packaging — Tape & Reel (TR), 800 pcs per reel

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