IRFS52N15DTRLP vs BSC190N15NS3GATMA1 Perbandingan
Perbandingan bersamaan detil IRFS52N15DTRLP dari Infineon dan BSC190N15NS3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
BSC190N15NS3GATMA1 - 150V 50A N-Channel OptiMOS 3 MOSFET | Infineon
BSC190N15NS3GATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IRFS52N15DTRLP | BSC190N15NS3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel MOSFET | — |
| Technology | HEXFET (Planar) | OptiMOS 3 (N-Channel) |
| Drain-to-Source Voltage (Vdss) | 150 V | — |
| Continuous Drain Current (Id) @ TC = 25 C | 51 A (Tc) | — |
| Continuous Drain Current (Id) @ TC = 100 C | 36 A (Tc, estimated) | — |
| Continuous Drain Current (Id) @ TA = 25 C | 60 A (Ta, datasheet) | — |
| On-Resistance Rds(on) max @ VGS = 10 V | 32 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V (typical 3 V) | 2.5 V to 3.5 V |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge in nC] | [DATA_NEEDED: total gate charge] |
| Gate-to-Drain Charge (Qgd) | [DATA_NEEDED: Qgd in nC] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss in pF] | — |
| Power Dissipation (Pd) @ TC = 25 C | 230 W (Tc) | — |
| Power Dissipation (Pd) @ TA = 25 C | 3.8 W (Ta) | — |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC in C/W] | — |
| Thermal Resistance Junction-to-Ambient (RthJA) | [DATA_NEEDED: RthJA in C/W] | — |
| Rentang Suhu Kerja | -55 C to +175 C (junction) | -55 C to +150 C |
| Paket | D2PAK (TO-263) surface mount | PG-TDSON-8-1 (TDSON-8 EP) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 3 (Gate, Drain, Source) + tab | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free Finish | Yes (matte tin) | — |
| Level MSL | 1 (per JEDEC J-STD-020, typical for D2PAK) | 1 |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID) at Tc=25C | — | 50 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | 20 V |
| On-Resistance RDS(on) max at VGS=10V | — | 19 mOhm |
| On-Resistance RDS(on) typ at VGS=10V | — | [DATA_NEEDED: RDS(on) typical at 10V] |
| Power Dissipation (PD) at Tc=25C | — | 125 W |