IRFS52N15DTRLP vs BSC190N15NS3GATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFS52N15DTRLP disebabkan oleh Infineon dan BSC190N15NS3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
BSC190N15NS3GATMA1 - 150V 50A N-Channel OptiMOS 3 MOSFET | Infineon
BSC190N15NS3GATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IRFS52N15DTRLP | BSC190N15NS3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel MOSFET | — |
| Technology | HEXFET (Planar) | OptiMOS 3 (N-Channel) |
| Drain-to-Source Voltage (Vdss) | 150 V | — |
| Continuous Drain Current (Id) @ TC = 25 C | 51 A (Tc) | — |
| Continuous Drain Current (Id) @ TC = 100 C | 36 A (Tc, estimated) | — |
| Continuous Drain Current (Id) @ TA = 25 C | 60 A (Ta, datasheet) | — |
| On-Resistance Rds(on) max @ VGS = 10 V | 32 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V (typical 3 V) | 2.5 V to 3.5 V |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge in nC] | [DATA_NEEDED: total gate charge] |
| Gate-to-Drain Charge (Qgd) | [DATA_NEEDED: Qgd in nC] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss in pF] | — |
| Power Dissipation (Pd) @ TC = 25 C | 230 W (Tc) | — |
| Power Dissipation (Pd) @ TA = 25 C | 3.8 W (Ta) | — |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC in C/W] | — |
| Thermal Resistance Junction-to-Ambient (RthJA) | [DATA_NEEDED: RthJA in C/W] | — |
| Gambaran Suhu Operasi | -55 C to +175 C (junction) | -55 C to +150 C |
| Kemasan | D2PAK (TO-263) surface mount | PG-TDSON-8-1 (TDSON-8 EP) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 3 (Gate, Drain, Source) + tab | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free Finish | Yes (matte tin) | — |
| Aras MSL | 1 (per JEDEC J-STD-020, typical for D2PAK) | 1 |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID) at Tc=25C | — | 50 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | 20 V |
| On-Resistance RDS(on) max at VGS=10V | — | 19 mOhm |
| On-Resistance RDS(on) typ at VGS=10V | — | [DATA_NEEDED: RDS(on) typical at 10V] |
| Power Dissipation (PD) at Tc=25C | — | 125 W |