IRFZ34NPBF vs IRFP2907PBF Perbandingan

Perbandingan bersamaan detil IRFZ34NPBF dari Infineon dan IRFP2907PBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFZ34NPBF IRFP2907PBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Part Status Active —
FET Type N-Channel, Enhancement Mode —
Technology HEXFET (Planar DMOS, 5th generation) HEXFET Stripe Planar DMOS (N-Channel)
Drain-Source Voltage (V_DSS) 55 V —
Continuous Drain Current (I_D) at Tc=25C 29 A —
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (P_D) at Tc=25C 68 W —
On-Resistance R_DS(on) max at V_GS=10V 40 mOhm —
Gate Charge (Q_g) typ 22.7 nC —
Gate Threshold Voltage V_GS(th) typ [DATA_NEEDED: gate threshold voltage] —
Input Capacitance (C_iss) typ [DATA_NEEDED: input capacitance] —
Rentang Suhu Kerja -55 C to +175 C —
Maximum Junction Temperature 175 C —
Paket TO-220AB (3-pin + tab, through-hole) —
Tipe Mounting Through Hole —
Lead-Free Status Yes (Pb-free, RoHS compliant) —
Qualification JEDEC standard —
Status RoHS Compliant —
Configuration Single N-Channel, 3-pin (3+tab) —
Part Number — IRFP2907PBF
Drain-to-Source Voltage (V_DSS) — 75 V
Continuous Drain Current (I_D) at T_C = 25 C — 209 A
Static Drain-to-Source On-Resistance (R_DS(on)) — 4.5 mOhm at V_GS = 10 V
Power Dissipation (P_D) at T_C = 25 C — 470 W
Total Gate Charge (Q_g) — 410 nC
Maximum Junction Operating Temperature — +175 C
Package / Mounting Type — TO-247AC (Through Hole)
Jumlah Pin — 3 (Gate, Drain, Source)
RoHS Compliance — Yes (Pb-free)
Avalanche Rated — Yes (repetitive avalanche rated)
Body Diode — Integral (no external anti-parallel diode required)
Lead-Free — Yes

Spek dan Sumber

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