IRLR2705TRPBF vs IRLR3105TRPBF Perbandingan

Perbandingan bersamaan detil IRLR2705TRPBF dari Infineon dan IRLR3105TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRLR2705TRPBF IRLR3105TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel MOSFET, Metal Oxide N-Channel
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at Tc=25C 28 A —
Continuous Drain Current (ID) at TA=25C [DATA_NEEDED: ID at TA=25C with 1in2 copper] —
RDS(on) Max at VGS=10V 40 mOhm —
RDS(on) Max at VGS=5V [DATA_NEEDED: RDS(on) at VGS=5V] —
Gate-to-Source Voltage (VGS) Max [DATA_NEEDED: VGS absolute max, +/-V] —
Gate Threshold Voltage (VGS(th)) Logic-Level (compatible with 4V drive) —
Total Gate Charge (Qg) 16.7 nC 13.3 nC
Power Dissipation (PD) at Tc=25C 68 W —
Power Dissipation (PD) at TA=25C [DATA_NEEDED: PD at TA=25C with 1in2 copper] —
Suhu Hubung Kerja -55C to +175C —
Paket TO-252AA (DPAK) TO-252AA (DPAK, 2 leads + tab)
Tipe Mounting Surface Mount Surface Mount
Technology HEXFET (IR MOSFET generation 5) HEXFET (IR MOSFET)
Avalanche Rated Yes —
Lead-Free / RoHS Yes (Pb-free, RoHS compliant) —
Level MSL [DATA_NEEDED: MSL rating per JEDEC J-STD-020] —
Drain-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at Tc — 25 A
Rds(on) max @ VGS=10V — 37 mOhm
Rds(on) max @ VGS=5V — [DATA_NEEDED: Rds(on) at 5V]
Gate-Source Voltage (VGS) max — ±16 V
Input Capacitance (Ciss) — 710 pF @ 25 V
Power Dissipation (Pd) at Tc — 57 W
Rentang Suhu Kerja — [DATA_NEEDED: TJ min/max]
Gate Drive Type — Logic-Level
Status RoHS — Compliant
Packaging — Tape & Reel (TRPBF)
Supplier Device Package — TO-252AA (DPAK)

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