IRLR2705TRPBF vs IRLR3105TRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRLR2705TRPBF sa pamamagitan ng Infineon at IRLR3105TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRLR2705TRPBF IRLR2705TRPBF - 55V 28A N-Channel HEXFET MOSFET | Infineon

IRLR2705TRPBF - 55V 28A N-Channel HEXFET MOSFET | Infineon

IRLR2705TRPBF ✓ Nakahanda
Infineon
IRLR3105TRPBF IRLR3105TRPBF - 55V N-Channel HEXFET MOSFET, 25A, TO-252

IRLR3105TRPBF - 55V N-Channel HEXFET MOSFET, 25A, TO-252

IRLR3105TRPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRLR2705TRPBF IRLR3105TRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel MOSFET, Metal Oxide N-Channel
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at Tc=25C 28 A —
Continuous Drain Current (ID) at TA=25C [DATA_NEEDED: ID at TA=25C with 1in2 copper] —
RDS(on) Max at VGS=10V 40 mOhm —
RDS(on) Max at VGS=5V [DATA_NEEDED: RDS(on) at VGS=5V] —
Gate-to-Source Voltage (VGS) Max [DATA_NEEDED: VGS absolute max, +/-V] —
Gate Threshold Voltage (VGS(th)) Logic-Level (compatible with 4V drive) —
Total Gate Charge (Qg) 16.7 nC 13.3 nC
Power Dissipation (PD) at Tc=25C 68 W —
Power Dissipation (PD) at TA=25C [DATA_NEEDED: PD at TA=25C with 1in2 copper] —
Temperature ng Junction na Operasyon -55C to +175C —
Packhaging TO-252AA (DPAK) TO-252AA (DPAK, 2 leads + tab)
Uri ng Pagpapasok Surface Mount Surface Mount
Technology HEXFET (IR MOSFET generation 5) HEXFET (IR MOSFET)
Avalanche Rated Yes —
Lead-Free / RoHS Yes (Pb-free, RoHS compliant) —
Level ng MSL [DATA_NEEDED: MSL rating per JEDEC J-STD-020] —
Drain-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at Tc — 25 A
Rds(on) max @ VGS=10V — 37 mOhm
Rds(on) max @ VGS=5V — [DATA_NEEDED: Rds(on) at 5V]
Gate-Source Voltage (VGS) max — ±16 V
Input Capacitance (Ciss) — 710 pF @ 25 V
Power Dissipation (Pd) at Tc — 57 W
Hanay ng Temperature na Operasyon — [DATA_NEEDED: TJ min/max]
Gate Drive Type — Logic-Level
Tindminan RoHS — Compliant
Packaging — Tape & Reel (TRPBF)
Supplier Device Package — TO-252AA (DPAK)

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