IRLR3410TRPBF vs IRLR3636TRLPBF Perbandingan
Perbandingan bersamaan detil IRLR3410TRPBF dari Infineon dan IRLR3636TRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRLR3410TRPBF | IRLR3636TRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel MOSFET |
| Technology | HEXFET (IR MOSFET, 5th generation) | IR HEXFET® (IR MOSFET™) |
| Drain-Source Voltage (Vdss) | 100 V | — |
| Continuous Drain Current (Id) at Tc=25C | 17 A | — |
| Power Dissipation (Pd) at Tc=25C | 79 W | — |
| On-Resistance RDS(on) max | 105 mOhm | — |
| Gate Threshold Voltage Vgs(th) | Logic-level (drive ~4.5V) | — |
| Total Gate Charge (Qg) | 22.7 nC | — |
| Paket | TO-252AA (DPAK), surface mount | TO-252AA (DPAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55C to +175C (junction) | -55 °C to +175 °C (TJ) |
| Lead-Free / RoHS | Yes (PBF suffix) | Yes (PBF suffix) |
| Level MSL | 1 (unlimited floor life at <30C/85% RH) | — |
| Drain Tab Connection | Tab electrically tied to Drain | — |
| Polarity | N-Channel enhancement mode | — |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, TC=25°C) | — | 50 A |
| Continuous Drain Current (ID, TC=100°C) | — | 32 A [DATA_NEEDED: exact TC=100°C ID rating] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM rating] |
| RDS(on) Max @ VGS=10V | — | 6.8 mΩ |
| Gate-to-Source Voltage (VGS) Max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | 1.0 V to 2.5 V (logic-level) |
| Total Gate Charge (QG) | — | 33 nC |
| Power Dissipation (PD, TC=25°C) | — | 143 W |
| Avalanche Rated | — | Yes (per Infineon datasheet family) |