ISC011N06LM5ATMA1 vs IPC90N04S5L3R3ATMA1 Perbandingan

Perbandingan bersamaan detil ISC011N06LM5ATMA1 dari Infineon dan IPC90N04S5L3R3ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISC011N06LM5ATMA1 IPC90N04S5L3R3ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number ISC011N06LM5ATMA1 —
Technology OptiMOS 5 —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 60 V 40 V
Continuous Drain Current (ID) at Ta 37 A —
Continuous Drain Current (ID) at Tc 288 A —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 188 W —
RDS(on) max at VGS=10V 1.15 mOhm —
Paket PG-TDSON-8-17 (SuperSO8 5x6 mm) PG-TDSON-8-34 (TDSON-8)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 8 —
Rentang Suhu Kerja -55C to +175C —
Status RoHS Compliant —
Level MSL [DATA_NEEDED: MSL level] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Product Family — OptiMOS 5 40V
FET Type — N-Channel, Enhancement Mode
Continuous Drain Current (ID) at TC=25°C — 90 A
On-Resistance RDS(on) max at VGS=10V — 3.3 mΩ
On-Resistance RDS(on) at VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage VGS(th) — 1.7 V to 2.7 V (logic level)
Total Power Dissipation (TC=25°C) — 62 W
Suhu Hubung Kerja — -55°C to +175°C
Storage Temperature Range — [DATA_NEEDED: storage temp range]
MSL Moisture Sensitivity — MSL1 (per JEDEC J-STD-020)
Peak Reflow Temperature — 260°C
Qualification — AEC-Q101 automotive qualified
Avalanche Tested — 100% (production-level)
RoHS Compliance — Compliant (Green Product)

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