ISC011N06LM5ATMA1 vs IPC90N04S5L3R3ATMA1 比較

詳細並排比較 ISC011N06LM5ATMA1 由 Infineon 與 IPC90N04S5L3R3ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
ISC011N06LM5ATMA1 ISC011N06LM5ATMA1 - 60V 1.1mOhm OptiMOS 5 N-MOSFET | Infineon

ISC011N06LM5ATMA1 - 60V 1.1mOhm OptiMOS 5 N-MOSFET | Infineon

ISC011N06LM5ATMA1 ✓ 啟用中
Infineon
IPC90N04S5L3R3ATMA1 IPC90N04S5L3R3ATMA1 - 40V 90A OptiMOS N-Channel MOSFET | Infineon

IPC90N04S5L3R3ATMA1 - 40V 90A OptiMOS N-Channel MOSFET | Infineon

IPC90N04S5L3R3ATMA1 ✓ 啟用中

規格比較

參數 ISC011N06LM5ATMA1 IPC90N04S5L3R3ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Part Number ISC011N06LM5ATMA1 —
Technology OptiMOS 5 —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 60 V 40 V
Continuous Drain Current (ID) at Ta 37 A —
Continuous Drain Current (ID) at Tc 288 A —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 188 W —
RDS(on) max at VGS=10V 1.15 mOhm —
封裝 PG-TDSON-8-17 (SuperSO8 5x6 mm) PG-TDSON-8-34 (TDSON-8)
安裝類型 Surface Mount Surface Mount
腳位數 8 —
工作溫度範圍 -55C to +175C —
RoHS 狀態 Compliant —
MSL 等級 [DATA_NEEDED: MSL level] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Product Family — OptiMOS 5 40V
FET Type — N-Channel, Enhancement Mode
Continuous Drain Current (ID) at TC=25°C — 90 A
On-Resistance RDS(on) max at VGS=10V — 3.3 mΩ
On-Resistance RDS(on) at VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage VGS(th) — 1.7 V to 2.7 V (logic level)
Total Power Dissipation (TC=25°C) — 62 W
工作接面溫度 — -55°C to +175°C
Storage Temperature Range — [DATA_NEEDED: storage temp range]
MSL Moisture Sensitivity — MSL1 (per JEDEC J-STD-020)
Peak Reflow Temperature — 260°C
Qualification — AEC-Q101 automotive qualified
Avalanche Tested — 100% (production-level)
RoHS Compliance — Compliant (Green Product)

資料表與資源

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