ISC015N04NM5ATMA1 vs IAUC41N06S5L100ATMA1 Perbandingan

Perbandingan bersamaan detil ISC015N04NM5ATMA1 dari Infineon dan IAUC41N06S5L100ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUC41N06S5L100ATMA1 IAUC41N06S5L100ATMA1 - 60V 41A N-Ch OptiMOS 5 MOSFET | Infineon

IAUC41N06S5L100ATMA1 - 60V 41A N-Ch OptiMOS 5 MOSFET | Infineon

IAUC41N06S5L100ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum ISC015N04NM5ATMA1 IAUC41N06S5L100ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 5 40V Normal Level —
FET Type N-Channel —
Technology OptiMOS 5 (trench MOSFET) OptiMOS 5 (Trench MOSFET)
Drain-Source Voltage (VDS) 40 V 60 V
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] [DATA_NEEDED: max VGS rating]
Gate Threshold Voltage (VGS(th)) 3.4 V (typ) [DATA_NEEDED: VGS(th) typical]
R_DS(on) max 1.5 mOhm @ VGS=10 V, ID=50 A —
Continuous Drain Current (ID) at Ta=25C 33 A —
Continuous Drain Current (ID) at Tc=25C 206 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM rating] —
Power Dissipation (Ta) 3 W —
Power Dissipation (Tc) 115 W —
Rentang Suhu Kerja -55 C to +175 C (junction, per OptiMOS 5) -55C to +175C
Paket / Case PG-TDSON-8 FL (SuperSO8 5x6 mm) —
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 8 —
Status RoHS Compliant Compliant
Level MSL 1 (per Infineon SuperSO8 family) [DATA_NEEDED: MSL rating]
Drive Level Normal Level (VGS(th) ~3.4 V) —
Continuous Drain Current (ID, Tj) — 41 A
Power Dissipation (PD, TC) — 42 W
On-State Resistance (RDS(on)) max — 10 mOhm at VGS=10 V
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total]
Paket — PG-TDSON-8-33 (TDSON-8, 5x6 mm)
Channel Type — N-Channel
Automotive Qualified — Yes (AEC-Q101 automotive grade)
Interconnect — Copper clip (low-inductance)

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