ISC015N04NM5ATMA1 vs IAUC41N06S5L100ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISC015N04NM5ATMA1 sa pamamagitan ng Infineon at IAUC41N06S5L100ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
ISC015N04NM5ATMA1 - 40V 1.5mOhm OptiMOS 5 N-MOSFET | Infineon
ISC015N04NM5ATMA1 ✓ NakahandaInfineon
IAUC41N06S5L100ATMA1 - 60V 41A N-Ch OptiMOS 5 MOSFET | Infineon
IAUC41N06S5L100ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | ISC015N04NM5ATMA1 | IAUC41N06S5L100ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 40V Normal Level | — |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (trench MOSFET) | OptiMOS 5 (Trench MOSFET) |
| Drain-Source Voltage (VDS) | 40 V | 60 V |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | [DATA_NEEDED: max VGS rating] |
| Gate Threshold Voltage (VGS(th)) | 3.4 V (typ) | [DATA_NEEDED: VGS(th) typical] |
| R_DS(on) max | 1.5 mOhm @ VGS=10 V, ID=50 A | — |
| Continuous Drain Current (ID) at Ta=25C | 33 A | — |
| Continuous Drain Current (ID) at Tc=25C | 206 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM rating] | — |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 115 W | — |
| Hanay ng Temperature na Operasyon | -55 C to +175 C (junction, per OptiMOS 5) | -55C to +175C |
| Packhaging / Kaso | PG-TDSON-8 FL (SuperSO8 5x6 mm) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pin | 8 | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 (per Infineon SuperSO8 family) | [DATA_NEEDED: MSL rating] |
| Drive Level | Normal Level (VGS(th) ~3.4 V) | — |
| Continuous Drain Current (ID, Tj) | — | 41 A |
| Power Dissipation (PD, TC) | — | 42 W |
| On-State Resistance (RDS(on)) max | — | 10 mOhm at VGS=10 V |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Packhaging | — | PG-TDSON-8-33 (TDSON-8, 5x6 mm) |
| Channel Type | — | N-Channel |
| Automotive Qualified | — | Yes (AEC-Q101 automotive grade) |
| Interconnect | — | Copper clip (low-inductance) |