ISC025N08NM5LF2ATMA1 vs ISZ056N03LF2SATMA1 Perbandingan
Perbandingan bersamaan detil ISC025N08NM5LF2ATMA1 dari Infineon dan ISZ056N03LF2SATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
ISC025N08NM5LF2ATMA1 - 80V 2.55mΩ Linear FET MOSFET | Infineon
ISC025N08NM5LF2ATMA1 ✓ AktifInfineon
ISZ056N03LF2SATMA1 - 30V 72A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ056N03LF2SATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | ISC025N08NM5LF2ATMA1 | ISZ056N03LF2SATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide), OptiMOS 5 LF2 | — |
| Drain-Source Voltage (VDS) Max | 80 V | — |
| Continuous Drain Current (ID) @ TA=25°C | 23 A | — |
| Continuous Drain Current (ID) @ TC=25°C | 198 A | — |
| On-Resistance (RDS(on)) Max | 2.55 mΩ | — |
| Gate-Source Threshold (VGS(th)) Max | 3.9 V | — |
| Total Gate Charge (Qg) Max | 96 nC | — |
| Power Dissipation @ TA | 3 W | — |
| Power Dissipation @ TC | 217 W | — |
| Paket | PG-TDSON-8 FL (Surface Mount) | PG-TSDSON-8 (PQFN 3.3x3.3 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | [DATA_NEEDED: operating temperature range] | -55 C to +175 C |
| Polarity | N-Channel | — |
| Status RoHS | Compliant | Compliant |
| Ordering Code Suffix | ATMA1 (Tape & Reel, 13-inch) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | StrongIRFET 2 |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta | — | 16 A |
| Continuous Drain Current (ID) at Tc | — | 72 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: gate-source voltage max] |
| Gate Threshold Voltage (VGS(th)) | — | 2.35 V (typ) |
| On-Resistance (RDS(on)) max at VGS=10V | — | 5.6 mOhm |
| On-Resistance (RDS(on)) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 52 W |