ISC028N03LF2SATMA1 vs ISC025N08NM5LF2ATMA1 Perbandingan

Perbandingan bersamaan detil ISC028N03LF2SATMA1 dari Infineon dan ISC025N08NM5LF2ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
ISC025N08NM5LF2ATMA1 ISC025N08NM5LF2ATMA1 - 80V 2.55mΩ Linear FET MOSFET | Infineon

ISC025N08NM5LF2ATMA1 - 80V 2.55mΩ Linear FET MOSFET | Infineon

ISC025N08NM5LF2ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum ISC028N03LF2SATMA1 ISC025N08NM5LF2ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 5 30V —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) max 30 V —
Continuous Drain Current (ID) at TA=25C 24 A —
Continuous Drain Current (ID) at TC=25C 128 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max at VGS=10V 2.8 mOhm —
Gate Threshold Voltage VGS(th) typ 2.35 V —
Power Dissipation at TA 3 W —
Power Dissipation at TC 83 W —
Suhu Hubung Kerja -55 C to +175 C —
Paket PG-TDSON-8-62 (5x6 mm) with exposed pad PG-TDSON-8 FL (Surface Mount)
Tipe Mounting Surface Mount Surface Mount
RoHS / Lead-Free Yes (RoHS compliant) —
Level MSL 1 (per JEDEC J-STD-020) —
FET Type — N-Channel
Technology — MOSFET (Metal Oxide), OptiMOS 5 LF2
Drain-Source Voltage (VDS) Max — 80 V
Continuous Drain Current (ID) @ TA=25°C — 23 A
Continuous Drain Current (ID) @ TC=25°C — 198 A
On-Resistance (RDS(on)) Max — 2.55 mΩ
Gate-Source Threshold (VGS(th)) Max — 3.9 V
Total Gate Charge (Qg) Max — 96 nC
Power Dissipation @ TA — 3 W
Power Dissipation @ TC — 217 W
Rentang Suhu Kerja — [DATA_NEEDED: operating temperature range]
Polarity — N-Channel
Status RoHS — Compliant
Ordering Code Suffix — ATMA1 (Tape & Reel, 13-inch)

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